JPS5870573A - 化合物半導体電界効果トランジスタ - Google Patents

化合物半導体電界効果トランジスタ

Info

Publication number
JPS5870573A
JPS5870573A JP56169145A JP16914581A JPS5870573A JP S5870573 A JPS5870573 A JP S5870573A JP 56169145 A JP56169145 A JP 56169145A JP 16914581 A JP16914581 A JP 16914581A JP S5870573 A JPS5870573 A JP S5870573A
Authority
JP
Japan
Prior art keywords
layer
substrate
compound semiconductor
field effect
electron affinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56169145A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328821B2 (en]
Inventor
Hiroshi Terao
博 寺尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56169145A priority Critical patent/JPS5870573A/ja
Publication of JPS5870573A publication Critical patent/JPS5870573A/ja
Publication of JPH0328821B2 publication Critical patent/JPH0328821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56169145A 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ Granted JPS5870573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56169145A JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169145A JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5870573A true JPS5870573A (ja) 1983-04-27
JPH0328821B2 JPH0328821B2 (en]) 1991-04-22

Family

ID=15881115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169145A Granted JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5870573A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JPS6146031A (ja) * 1984-08-10 1986-03-06 Sanyo Electric Co Ltd 半導体積層構造
JPS62112378A (ja) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8806466B2 (en) * 2010-07-05 2014-08-12 Panasonic Corporation Program generation device, program production method, and program

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180186A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device and manufacturing method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180186A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JPS6146031A (ja) * 1984-08-10 1986-03-06 Sanyo Electric Co Ltd 半導体積層構造
JPS62112378A (ja) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0328821B2 (en]) 1991-04-22

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